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參數(shù)資料
| 型號： | AGR19180EF |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 410K |
| 代理商： | AGR19180EF |
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
F
E
0
8
1
9
1
R
G
A
Test Circuit Illustrations
A. Schematic
B. Component Layout
Parts List:
?
Microstrip line: Z1 0.500 in. x 0.067 in.; Z2, Z17 1.080 in. x 0.110 in.; Z3, Z16 0.210 in. x 0.067 in.; Z4, Z15 2.020 in. x 0.067 in.;
Z5, Z6 0.230 in. x 0.067 in.; Z7, Z8 0.455 in. x 0.700 in.; Z9, Z10 1.100 in. x 0.035 in.; Z11, Z12 0.475 in. x 0.740 in.;
Z13, Z14 0.100 in. x 0.067 in.; Z18 0.230 in. x 0.067 in.; Z19, Z20 0.490 in. x 0.050 in.; Z21, Z22 0.160 in. x 0.285 in.
?
ATC
chip capacitor: C1, C2, C21, C22: 10 pF; C7, C14, C23, C30, C41, C42: 8.2 pF; C12, C13: 1000 pF.
?
Kemet
tantalum capacitor: C27, C34: 10 F, 35 V T491D; C4, C9, C37, C38: 1 F, 50 V T491C.
?
Kemet
chip capacitor: C5, C10, C18, C26, C33: 0.1 F.
?
Sprague
tantalum surface-mount chip capacitor: C3, C8, C28, C29, C35, C36: 22 F, 35 V.
?
Vitramon
1206 capacitor: C5, C12: 22000 pF.
?
1206 size chip resistor: R1, R4: 4.7 kΩ; R2, R5 560 kΩ, R3, R6: 1.02 kΩ.
?
Fair-Rite
ferrite bead: FB1, FB2: 2743019447.
?
Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
Figure 2. Test Circuit
DUT
R1
C3
R3
Z9
Z1
Z2
C23
RF INPUT
VGG
VDD
C12
FB1
C7
Z3 C1 Z5
Z4 C2 Z6
Z8
Z7
Z10
Z16
C22
Z14
Z12
Z15
C21
Z13
Z11
7
1
Z
8
1
Z
RF OUTPUT
C24 C25 C26
C27
+
C30
VDD
C33 C38 C34 C35
+
Z20
Z19
1A
1B
3
2A
2B
PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
2B. GATE
3. SOURCE
R2
C4 C5
C6
R4
C8
R6
VGS
C13
FB2
C14
R5
C9 C10 C11
C37
C28
+
C29
+
C36
+
C31 C32
C41
C42
Z22
Z21
R3
R2
C1
C7 C41
C5
R1
C4 FB1C6 C12
C34
C30
C33
C32
C31
C38
C22
C8
R5
R4
C11
C10
C9
C13
C14
R6 FB2
C42
C2
C3
C36
C35
C27
C21
C25
C24
C37
C23
C26
8
2
C
9
2
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19K180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21030EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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