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參數(shù)資料
| 型號： | AGR19180EF |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 410K |
| 代理商： | AGR19180EF |
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180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characateristics (continued)
Table 4. RF Characteristics
* N-CDMA, typical peak/average ratio of 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz. VDD = 28 Vdc, IDQ = 2 x 800 mA,
and POUT = 38 W average.
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Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(Part is internally matched both on input and output.)
CRSS
—
4.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain
(VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
GPS
—
14.5 —
dB
Drain Efficiency
(VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
η
—
26
—
%
Third-order Intermodulation Distortion*
(VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration bandwidth
centered at f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier chan-
nel power)
IM3
—
–33 — dBc
Adjacent Channel Power Ratio*
(VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; ACPR measured in a 30 kHz integration bandwidth cen-
tered at f1 – 885 kHz and f2 + 885 kHz, referenced to the carrier channel
power)
ACPR
— –48.5 — dBc
Input Return Loss
(VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
IRL
—
–12 —
dB
Ruggedness
(VDD = 28 V, POUT = 180 W continuous wave (CW), IDQ = 1600 mA,
f = 1930 MHz, VSWR = 10:1 [all phase angles])
Ψ
No degradation in output
power.
(in Supplied Test Fixture)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19K180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21030EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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