Analog Supply Voltage (VPOS <" />
參數(shù)資料
型號： AD8176ABPZ
廠商： Analog Devices Inc
文件頁數(shù)： 38/40頁
文件大?。?/td> 0K
描述： IC VIDEO CROSSPOINT SWIT 676BGA
標準包裝： 1
功能： 視頻交叉點開關
電路： 3 x 16:9
電壓電源： 單/雙電源
電壓 - 電源，單路/雙路(±)： 4.5 V ~ 5.5 V，±2.5V
電流 - 電源： 600mA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 676-BGA
供應商設備封裝： 676-BGA（27x27）
包裝： 管件
AD8176
Rev. 0 | Page 7 of 40
ABSOLUTE MAXIMUM RATINGS
Table 12.
Parameter
Rating
Analog Supply Voltage (VPOS – VNEG)
+6 V
Digital Supply Voltage (VDD – DGND)
+6 V
Ground Potential Difference
(VNEG – DGND)
+0.5 V to –2.5 V
Maximum Potential Difference
(VDD – VNEG)
+8 V
Common-Mode Analog Input Voltage
(VNEG – 0.5 V)
to (VPOS + 0.5 V)
Differential Analog Input Voltage
±2 V
Digital Input Voltage
VDD
Output Voltage
(Disabled Analog Output)
(VPOS – 1 V) to (VNEG + 1 V)
Output Short-Circuit Duration
Momentary
Storage Temperature
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 13. Thermal Resistance
Package Type
θJA
Unit
PBGA
15
°C/W
POWER DISSIPATION
The AD8176 is operated with ±2.5 V or +5 V supplies and
can drive loads down to 100 Ω, resulting in a large range of
possible power dissipations. For this reason, extra care must
be taken derating the operating conditions based on ambient
temperature.
Packaged in a 676-lead BGA, the AD8176 junction-to-ambient
thermal impedance (θJA) is 15°C/W. For long-term reliability,
the maximum allowed junction temperature of the die should
not exceed 150°C. Temporarily exceeding this limit may cause a
shift in parametric performance due to a change in stresses
exerted on the die by the package. Exceeding a junction tem-
perature of 175°C for an extended period can result in device
failure. Figure 4 shows the range of allowed internal die power
dissipations that meet these conditions over the 40°C to +85°C
ambient temperature range. When using Table 13, do not include
external load power in the Maximum Power calculation, but do
include load current dropped on the die output transistors.
06
59
6-
0
04
AMBIENT TEMPERATURE (°C)
MA
XI
MU
M
PO
W
E
R
(
W
)
3
4
5
6
7
8
9
10
15
25
35
45
55
65
75
85
TJ = 150°C
Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature
ESD CAUTION
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