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參數(shù)資料
| 型號： | A64S9316G-85 |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 512K X 16 Bit Low Voltage Super RAM |
| 中文描述： | 為512k × 16位低電壓超內(nèi)存 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大小： | 171K |
| 代理商： | A64S9316G-85 |
A64S9316
PRELIMINARY
(July, 2002, Version 0.1)
9
AMIC Technology, Inc.
Read Cycle 2-1
(1, 3, 6)
t
RC
t
RC
t
SKEW
t
SKEW
t
ASC
t
AA
t
AHC
t
CEH
t
ASC
t
AHC
t
AA
t
ACE
t
CLZ
5
t
BE
t
BLZ
5
t
OE
t
OLZ
5
t
CHZ
5
t
BHZ
5
t
OHZ
5
t
ACE
t
CLZ
5
t
BE
t
BLZ
5
t
OE
t
OLZ
5
t
OHZ
5
t
BHZ
5
t
CHZ
5
Address
CE1
HB LB
OE
D
OUT
t
BE
Read Cycle 2-2
(1, 3, 6)
t
RC
t
RC
t
SKEW
t
SKEW
t
ASC
t
AHC
t
ACE
t
CLZ
5
t
BE
t
BLZ
5
t
OE
t
OLZ
5
t
BHZ
5
t
OHZ
5
t
BLZ
5
t
OE
t
OLZ
5
t
OHZ
5
t
BHZ
5
t
CHZ
5
Address
CE1
HB LB
OE
D
OUT
t
BE
t
SKEW
t
AA
t
AA
Notes: 1. WE is high for Read Cycle.
2. Device is continuously enabled
3. Address valid prior to or coincident with CE1 and (HB and, or LB ) transition low.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state. This parameter is sampled and not 100% tested.
6. CE2 is high for Read Cycle.
1
CE
= V
IL
, HB = V
IL
and, or LB = V
IL
.
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