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鍨嬭櫉锛� A3P600-2FGG484
寤犲晢锛� Microsemi SoC
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灏佽/澶栨锛� 484-BGA
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ProASIC3 DC and Switching Characteristics
2-6
Revision 13
Temperature and Voltage Derating Factors
Calculating Power Dissipation
Quiescent Supply Current
Power per I/O Pin
Table 2-6 Temperature and Voltage Derating Factors for Timing Delays
(normalized to TJ = 70掳C, VCC = 1.425 V)
Array Voltage VCC
(V)
Junction Temperature (掳C)
鈥�40掳C
0掳C
25掳C
70掳C
85掳C
100掳C
1.425
0.88
0.93
0.95
1.00
1.02
1.04
1.500
0.83
0.88
0.90
0.95
0.96
0.98
1.575
0.80
0.84
0.87
0.91
0.93
0.94
Table 2-7 Quiescent Supply Current Characteristics
A3P015 A3P030 A3P060 A3P125 A3P250 A3P400 A3P600 A3P1000
Typical (25掳C)
2 mA
3 mA
5 mA
8 mA
Max. (Commercial)
10 mA
20 mA
30 mA
50 mA
Max. (Industrial)
15 mA
30 mA
45 mA
75 mA
Note: IDD Includes VCC, VPUMP, VCCI, and VMV currents. Values do not include I/O static
contribution, which is shown in Table 2-11 and Table 2-12 on page 2-8.
Table 2-8 Summary of I/O Input Buffer Power (Per Pin) 鈥� Default I/O Software Settings
Applicable to Advanced I/O Banks
VMV (V)
Static Power
PDC2 (mW) 1
Dynamic Power
PAC9 (W/MHz) 2
Single-Ended
3.3 V LVTTL / 3.3 V LVCMOS
3.3
鈥�
16.22
3.3 V LVCMOS Wide Range3
3.3
鈥�
16.22
2.5 V LVCMOS
2.5
鈥�
5.12
1.8 V LVCMOS
1.8
鈥�
2.13
1.5 V LVCMOS (JESD8-11)
1.5
鈥�
1.45
3.3 V PCI
3.3
鈥�
18.11
3.3 V PCI-X
3.3
鈥�
18.11
Differential
LVDS
2.5
2.26
1.20
LVPECL
3.3
5.72
1.87
Notes:
1. PDC2 is the static power (where applicable) measured on VMV.
2. PAC9 is the total dynamic power measured on VCC and VMV.
3. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-B
specification.
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