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參數(shù)資料
| 型號： | 935267053005 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 消費家電 |
| 英文描述： | SPECIALTY CONSUMER CIRCUIT, UUC |
| 封裝： | WAFER |
| 文件頁數(shù)： | 8/23頁 |
| 文件大?。?/td> | 331K |
| 代理商： | 935267053005 |
January 2005
Page 16 of 23
Public
13 Electrical Specifications
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER
TEST
CONDITIONS
RATING
UNIT
Tstg
Storage Temperature Range
- 55 to +140
°C
Tj
Junction Temperature
- 55 to +140
°C
VESD
ESD Voltage Immunity
MIL-STD-883D,
Method 3015.7,
Human Body Model
± 2
kVpeak
Imax LA-LB Maximum Input Peak Current
3
± 80
mApeak
NOTES:
1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any conditions other than those described in the Operating Conditions and
Electrical Characteristics section of this specification is not implied.
2. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.
3. At 13.56 MHz, including current via resonance capacitor.
OPERATING CONDITIONS
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN
TYP
1
MAX
UNIT
Tamb
Operating Ambient Temperature
- 25
+
70
°C
Tj op
Operating Junction Temperature
- 25
+
85
°C
ILA-LB
Input Current
2
50
mArms
VLA-LB rd
Minimum Supply Voltage
3
for READ/EAS
Standard Mode
± 3.1
± 3.7
Vpeak
VLA-LB wr
Minimum Supply Voltage
3
for WRITE
Standard Mode
± 3.6
± 4.1
Vpeak
VLA-LB fm
Minimum Supply Voltage
3
for READ/EAS/WRITE
Fast Mode
± 5.2
± 6.5
Vpeak
fop
Operating Frequency
4
13.553
13.560
13.567
MHz
NOTES:
1. Typical ratings are not guaranteed. These values listed are at room temperature.
2. Including current via resonance capacitor.
3. The voltage between LA and LB is limited by the on-chip voltage limitation circuitry (corresponding to parameter ILA-LB).
4. Bandwidth limitation (±7 kHz) according to ISM band regulations.
ELECTRICAL CHARACTERISTICS
Tamb = - 25 to +70 °C
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN
TYP
1
MAX
UNIT
Cres
Input Capacitance between LA - LB
2
VLA-LB = 2 Vrms
92
97
102
pF
Pmin
Minimum Operating Supply Power
3
VLA-LB = 2 Vrms
450
W
mmin
Minimum Modulation of RF Voltage
for Demodulator Response
m
V
- V
V
+ V
max
min
max
min
=
10
14
%
mmax
Maximum Modulation of RF Voltage
for Demodulator Response
m
V
- V
V
+ V
max
min
max
min
=
30
%
tP sm
Modulation Pulse Length
of RF Voltage
4
Standard Mode,
m
≥ 10 %
3.54
5.31
5
9.44
s
tP fm
Modulation Start-Pulse Length
of RF Voltage
4
Fast Mode,
m
≥ 10 %
15.34
17.11
5
20.06
s
tD
Demodulator Response Time
m
≥ 10 %
0.1
0.8
2.4
s
Rmod
Modulator ON Resistance
50
115
250
tret
EEPROM Data Retention
Tamb ≤ 55 °C
10
Years
nwrite
EEPROM Write Endurance
100 000
Cycles
NOTES:
1. Typical ratings are not guaranteed. These values listed are at room temperature.
2. Measured with an HP4285A LCR meter at 13.56 MHz.
3. Including losses in resonant capacitor and rectifier.
4. The given values are derived from the 13.56 MHz system frequency.
5. Recommended values for pulse duration generated at the read/write device.
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