
1997 Aug 12
18
Philips Semiconductors
Preliminary specication
Frequency Shift Keying (FSK) receiver
UAA3202M
Table 4
Application component list for Fig.11
Table 5
Surface Acoustic Wave Resonator (SAWR) data
COMPONENT
VALUE
TOLERANCE
DESCRIPTION
R2
560
±2%
TC = 50 ppm/K
R3
220
±2%
TC = 50 ppm/K
R4
820 k
±2%
TC = 50 ppm/K
C1
4.7
F
±20%
C2
150 pF
±10%
TC = 0
±30 ppm/K; tan δ≤ 10 × 104; f = 1 MHz
C3
100 nF
±10%
TC = 0
±30 ppm/K; tan δ≤ 10 × 104; f = 1 MHz
C4
100 pF
±10%
TC = 0
±30 ppm/K; tan δ≤ 10 × 104; f = 1 MHz
C5
2.7 pF
±10%
TC = 0
±150 ppm/K; tan δ≤ 30 × 104; f = 1 MHz
C6
3to10pF
TC = 0
±300 ppm/K; tan δ≤ 20 × 104; f = 1 MHz
C7
56 pF
±10%
TC = 0
±30 ppm/K; tan δ≤ 10 × 104; f = 1 MHz
C8
33 pF
±10%
TC = 0
±30 ppm/K; tan δ≤ 10 × 104; f = 1 MHz
C9
100 pF
±10%
TC = 0
±30 ppm/K; tan δ≤ 10 × 104; f = 1 MHz
C10
5.6 pF
±10%
TC = 0
±30 ppm/K; tan δ≤ 20 × 104; f = 1 MHz
C11
100 pF
±10%
TC = 0
±30 ppm/K; tan δ≤ 10 × 104; f = 1 MHz
C12
100 nF
±10%
tan
δ≤ 25 × 103; f = 1 kHz
C13
2.2 nF
±10%
tan
δ≤ 25 × 103; f = 1 kHz
C14
33 nF
±10%
tan
δ≤ 25 × 103; f = 1 kHz
C16
3.9 pF
±10%
TC = 0
±150 ppm/K; tan δ≤ 30 × 104; f = 1 MHz
C17
10 nF
±10%
tan
δ≤ 25 × 103; f = 1 kHz
C18
1.8 pF
±10%
TC = 0
±150 ppm/K; tan δ≤ 30 × 104; f = 1 MHz
C19
39 pF
±10%
TC = 0
±30 ppm/K; tan δ≤ 10 × 104; f = 1 MHz
C20
3.3 pF
±10%
TC = 0
±150 ppm/K; tan δ≤ 30 × 104; f = 1 MHz
C22
18 pF
±5%
TC = 0
±30 ppm/K; tan δ≤ 10 × 104; f = 1 MHz
C23
47 nF
±10%
tan
δ≤ 25 × 103; f = 1 kHz
C24
22 pF
±5%
TC = 0
±30 ppm/K; tan δ≤ 10 × 104; f = 1 MHz
C25
1 nF
±10%
tan
δ≤ 25 × 103; f = 1 kHz
L1
10 nH
±10%
Qmin = 50 to 450 MHz; TC = 25 to 125 ppm/K
L2
150
H
±10%
Qmin = 45 to 800 kHz; Cstray ≤ 1pF
L3
220
H
±10%
Qmin = 45 to 800 kHz; Cstray ≤ 1pF
L4
33 nH
±10%
Qmin = 45 to 450 MHz; TC = 25 to 125 ppm/K
L5
470
H
±10%
Qmin = 45 to 800 kHz; Cstray ≤ 1pF
DESCRIPTION
SPECIFICATION
Type
one-port
Centre frequency
432.92 MHz
±75 kHz
Maximum insertion loss
1.5 dB
Typical loaded Q
1600 (50
load)
Temperature drift
0.032 ppm/K2
Turnover temperature
43
°C