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| 型號(hào)： | 934041380115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT5, S-MINI PACKAGE-5 |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | 934041380115 |
1996 Oct 08
6
Philips Semiconductors
Product specication
NPN wideband cascode transistor
BFC505
Fig.4
Minimum noise figure as a function of
frequency; typical values.
VC2-E1 =1V.
handbook, halfpage
6
4
2
0
MGG213
101
1
f (GHz)
F
(dB)
10
IC = 0.25 mA
1 mA
Fig.5
Minimum noise figure as a function of
collector current; typical values.
VC2-E1 =1V.
handbook, halfpage
6
4
2
0
MGG214
101
1
IC (mA)
F
(dB)
10
f = 900 MHz
500 MHz
Fig.6
Maximum stable gain and isolation as
functions of frequency; typical values.
(1) IC = 5 mA; VC2E1 =3V.
(2) IC = 1 mA; VC2E1 =1V.
(3) IC = 0.5 mA; VC2E1 =1V.
handbook, halfpage
50
10
30
40
20
100
20
60
80
40
MGG215
10
102
103
104
f (MHz)
MSG
(dB)
S21/S12
(dB)
(2)
(3)
(1)
Fig.7
Maximum stable gain and isolation as
functions of collector current; typical values.
(1) VC2E1 = 1 V; f = 500 MHz.
(2) VC2E1 = 1 V; f = 900 MHz.
(3) VC2E1 = 3 V; f = 2 GHz.
handbook, halfpage
40
30
20
10
MGG216
101
1
IC (mA)
MSG
(dB)
10
(1)
(2)
20
60
80
40
S21/S12
(dB)
(3)
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