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參數(shù)資料
| 型號(hào)： | 934041380115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT5, S-MINI PACKAGE-5 |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大小： | 82K |
| 代理商： | 934041380115 |
1996 Oct 08
4
Philips Semiconductors
Product specication
NPN wideband cascode transistor
BFC505
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
V(BR)CBO
collector-base breakdown voltage
IC = 2.5 A; IE =0
20
V
V(BR)CEO
collector-emitter breakdown
voltage
IC =10 A; IB =0
8
V
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 A; IC = 0
2.5
V
ICBO
collector-base leakage current
IE = 0; VCB =6V
50
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
AC characteristics of the cascode conguration measured in test circuit (note 1)
fT
transition frequency
IC = 5 mA; VC2-E1 = 3 V; f = 1 GHz
7.3
GHz
Cc
collector capacitance T2
IE =ie = 0; VC2-B2 = 0; f = 1 MHz
0.4
pF
Cre2
feedback capacitance T2
IC = 0; VC2-E1 =3V;f=1MHz
250
fF
Cre
feedback capacitance
IC = 0; VC2-E1 =3V;f=1MHz
10
fF
MSG
maximum stable power gain;
note 2
IC = 0.25 mA; VC2-E1 =1V;
f = 300 MHz; Tamb =25 °C
25
dB
IC = 0.5 mA; VC2-E1 =1V;
f = 900 MHz; Tamb =25 °C
22
dB
IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz;
Tamb =25 °C
23
dB
insertion power gain
IC = 0.5 mA; VC2-E1 =3V;
f = 300 MHz; Tamb =25 °C
21
dB
IC = 5 mA; VC2-E1 =3V;
f = 900 MHz; Tamb =25 °C
16
dB
IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz;
Tamb =25 °C
11
dB
maximum isolation; note 3
IC = 0.5 mA; VC2-E1 =1V;
f = 900 MHz
40
45
dB
IC = 5 mA; VC2-E1 =3V;
f = 900 MHz
60
68
dB
IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz
40
48
dB
F
noise gure
IC = 0.5 mA; VC2-E1 =1V;
f = 500 MHz;
ΓS = Γopt
1.1
1.4
dB
IC = 1 mA; VC2-E1 =3V;
f = 900 MHz;
ΓS = Γopt
1.8
2.1
dB
IC = 1 mA; VC2-E1 =1V;
f = 2 GHz;
ΓS = Γopt
3.5
dB
IP3
third order intercept point (input)
note 4
20
dBm
s
21
2
s
21 s12
2
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