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參數(shù)資料
| 型號(hào)： | 934041380115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT5, S-MINI PACKAGE-5 |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | 934041380115 |
1996 Oct 08
5
Philips Semiconductors
Product specication
NPN wideband cascode transistor
BFC505
Notes
1. VB2 =VC2E1/2 + 0.6 V
2. MSG =
;
3. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application).
4. IC = 1 mA; VCE = 3 V; RS =50 ; ZL = opt; Tamb =25 °C; fp = 900 MHz; fq = 902 MHz; measured at
f(2pq) = 904 MHz.
s
12 s21
kk
2
1
–
×
k
1s
11
s
22
×
s
12
s
21
×
–
2
s
11
2
s
22
2
–
–
+
2s
12
s
21
×
-----------------------------------------------------------------------------------------------------------------
=
Fig.2
Power derating as a function of soldering
point temperature; typical values.
handbook, halfpage
0
50
100
200
400
0
MBG208
150
600
200
Ptot
(mW)
Ts (
oC)
double loaded
single loaded
Fig.3
Transition frequency as a function of
collector current; typical values.
f = 1 GHz; Tamb =25 °C.
handbook, halfpage
12
4
8
9 V
6 V
3 V
MBG209
0
110
fT
(GHz)
IC (mA)
102
101
VC2-E1 = 12 V
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