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| 型號(hào)： | 934018870115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大小： | 141K |
| 代理商： | 934018870115 |
September 1995
6
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG541
In Figs 6 to 9, GUM = maximum power gain; MSG =
maximum stable gain; Gmax = maximum available gain.
Fig.6 Gain as a function of collector current.
VCE = 8 V; f = 900 MHz.
handbook, halfpage
MRA658
25
20
gain
(dB)
020
MSG
40
60
IC (mA)
Gmax
GUM
80
15
10
5
0
Fig.7 Gain as a function of collector current.
VCE = 8 V; f = 2 GHz.
handbook, halfpage
MRA659
25
20
gain
(dB)
0
204060
IC (mA)
Gmax
GUM
80
15
10
5
0
Fig.8 Gain as a function of frequency.
IC = 10 mA; VCE = 8 V.
handbook, halfpage
MRA660
50
40
gain
(dB)
MSG
Gmax
GUM
30
20
10
0
10
f (MHz)
102
103
104
Fig.9 Gain as a function of frequency.
IC = 40 mA; VCE = 8 V.
handbook, halfpage
MRA661
50
40
gain
(dB)
Gmax
GUM
30
20
10
0
10
f (MHz)
102
103
104
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