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參數(shù)資料
| 型號(hào)： | 934018870115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | 934018870115 |
September 1995
3
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG541
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
I
DC collector current
120
mA
Ptot
total power dissipation
up to Ts = 140 °C; note 1
650
mW
hFE
DC current gain
IC = 40 mA; VCE =8 V; Tj =25 °C
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
0.7
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
9
GHz
GUM
maximum unilateral power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb =25 °C
15
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
9
dB
S
21
2
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb =25 °C
13
14
dB
F
noise gure
Γ
s = Γopt; IC = 10 mA; VCE =8 V;
f = 900 MHz; Tamb =25 °C
1.3
1.8
dB
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; RL =50 ;
f = 900 MHz; Tamb =25 °C
21
dBm
ITO
third order intercept point
IC = 40 mA; VCE = 8 V; RL =50 ;
f = 900 MHz; Tamb =25 °C
34
dBm
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
120
mA
Ptot
total power dissipation
up to Ts = 140 °C; note 1
650
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 140 °C; note 1
55 K/W
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