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參數(shù)資料
| 型號： | 934018870115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 141K |
| 代理商： | 934018870115 |
September 1995
5
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG541
Fig.2 Power derating curve.
VCE ≤ 10 V.
handbook, halfpage
0
50
100
200
1000
800
200
0
600
400
MRA654 - 1
150
P
tot
(mW)
T
s
(o C)
Fig.3
DC current gain as a function of collector
current.
VCE = 8 V; Tj =25 °C.
handbook, halfpage
MRA655
250
200
hFE
102
101
110
IC (mA)
102
150
100
50
0
Fig.4
Feedback capacitance as a function of
collector-base voltage.
IC = 0; f = 1 MHz.
handbook, halfpage
MRA656
1.0
0.8
Cre
(pF)
04
8
12
VCB (V)
0.6
0.4
0.2
0
Fig.5
Transition frequency as a function of
collector current.
f = 1 GHz; Tamb =25 °C.
handbook, halfpage
MRA657
12
8
fT
(GHz)
101
110
IC (mA)
VCE = 8 V
4 V
102
4
0
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