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參數(shù)資料
| 型號： | 934008990215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 98K |
| 代理商： | 934008990215 |
1996 Sep 11
6
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
PMBFJ308; PMBFJ309;
PMBFJ310
Fig.5
Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
VDS = 10 V; ID = 10 mA; Tj =25 °C.
handbook, halfpage
0
150
100
50
0
1
2
4
MCD221
3
gos
(
S)
VGSoff (V)
Fig.6
Drain-source on-state resistance as a
function of gate-source cut-off voltage;
typical values.
VDS = 100 mV; VGS = 0; Tj =25 °C.
handbook, halfpage
0
1
2
4
80
60
20
0
40
MCD222
3
RDSon
(
)
VGSoff (V)
Fig.7 Typical output characteristics; PMBFJ308.
handbook, halfpage
0
4
8
12
16
12
4
0
8
MCD216
VDS (V)
ID
(mA)
VGS = 0 V
0.25 V
0.5 V
0.75 V
1 V
Tj =25 °C.
Fig.8 Typical transfer characteristics; PMBFJ308.
handbook, halfpage
2
1.5
1
0.5
0
16
12
4
0
8
MCD213
VGS (V)
ID
(mA)
VDS = 10 V; Tj =25 °C.
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