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參數(shù)資料
| 型號(hào)： | 934008990215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | SMD, SST3, 3 PIN |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大小： | 98K |
| 代理商： | 934008990215 |
1996 Sep 11
4
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
PMBFJ308; PMBFJ309;
PMBFJ310
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage IG = 1 A; VDS =0
25
V
VGSoff
gate-source cut-off voltage
ID =1 A; VDS =10V
V
PMBFJ308
1
6.5
V
PMBFJ309
1
4V
PMBFJ310
2
6.5
V
VGSS
gate-source forward voltage
IG = 1 mA; VDS =0
1V
IDSS
drain current
VDS =10V; VGS =0
PMBFJ308
12
60
mA
PMBFJ309
12
30
mA
PMBFJ310
24
60
mA
IGSS
gate leakage current
VGS = 15 V; VDS =0
1nA
RDSon
drain-source on-state
resistance
VGS = 0; VDS = 100 mV
50
y
fs
forward transfer admittance
ID = 10 mA; VDS =10V
10
mS
yos
common source output
admittance
ID = 10 mA; VDS =10V
250
S
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