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參數資料
| 型號： | 934008990215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | SMD, SST3, 3 PIN |
| 文件頁數： | 5/12頁 |
| 文件大?。?/td> | 98K |
| 代理商： | 934008990215 |
1996 Sep 11
2
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
PMBFJ308; PMBFJ309;
PMBFJ310
FEATURES
Low noise
Interchangeability of drain and source connections
High gain.
APPLICATIONS
AM input stage in car radios
VHF amplifiers
Oscillators and mixers.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
s
source
2
d
drain
3
g
gate
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
21
3
MAM036
Top view
Marking codes:
PMBFJ308: M08.
PMBFJ309: M09.
PMBFJ310: M10.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
±25
V
VGSoff
gate-source cut-off voltage
VDS =10V; ID =1 A
PMBFJ308
1
6.5
V
PMBFJ309
1
4V
PMBFJ310
2
6.5
V
IDSS
drain current
VGS = 0; VDS =10V
PMBFJ308
12
60
mA
PMBFJ309
12
30
mA
PMBFJ310
24
60
mA
Ptot
total power dissipation
up to Tamb =25 °C
250
mW
yfs
forward transfer admittance
VDS =10V; ID =10mA
10
mS
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