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參數(shù)資料
| 型號(hào)： | 934008580215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 934008580215 |
December 1997
5
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFT25A
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
Fig.6 Gain as a function of collector current.
VCE = 1 V; f = 500 MHz.
handbook, halfpage
0
0.5
1.0
2.0
25
0
10
MCD104
1.5
20
15
5
MSG
GUM
gain
(dB)
I
(mA)
C
Fig.7 Gain as a function of collector current.
VCE = 1 V; f = 1 GHz.
handbook, halfpage
0
0.5
1.0
2.0
20
15
5
0
10
MCD105
1.5
MSG
GUM
gain
(dB)
I
(mA)
C
Fig.8 Gain as a function of frequency.
VCE = 1 V; Ic = 0.5 mA.
handbook, halfpage
50
0
10
MCD106
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
MSG
G UM
G max
Fig.9 Gain as a function of frequency.
VCE = 1 V; Ic = 1 mA.
handbook, halfpage
50
0
10
MCD107
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
MSG
GUM
G max
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