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參數(shù)資料
| 型號： | 934008580215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 934008580215 |
December 1997
3
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFT25A
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
8V
VCEO
collector-emitter voltage
open base
5V
VEBO
emitter-base voltage
open collector
2V
IC
DC collector current
6.5
mA
Ptot
total power dissipation
up to Ts = 165 °C;
note 1
32
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-s
from junction to soldering point (note 1)
260 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 5 V
50
nA
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
fT
transition frequency
IC = 1 mA; VCE = 1 V;
Tamb = 25 °C; f = 500 MHz
3.5
5
GHz
Cre
feedback capacitance
IC =ic = 0; VCB = 1 V; f = 1 MHz
0.3
0.45
pF
GUM
maximum unilateral power
gain (note 1)
IC = 0.5 mA; VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
15
dB
F
noise gure
Γ = Γ
opt;IC = 0.5 mA; VCE = 1 V;
Tamb =25 °C; f = 1 GHz
1.8
dB
Γ = Γopt;IC = 1 mA; VCE = 1 V;
Tamb =25 °C; f = 1 GHz
2
dB
G
UM
10
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
log
=
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