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參數(shù)資料
| 型號： | 934008580215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 934008580215 |
December 1997
2
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFT25A
FEATURES
Low current consumption
(100
A 1 mA)
Low noise figure
Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFT25A is a silicon npn
transistor, primarily intended for use
in RF low power amplifiers, such as
pocket telephones and paging
systems with signal frequencies up to
2 GHz.
The transistor is encapsulated in a
3-pin plastic SOT23 envelope.
PINNING
PIN
DESCRIPTION
Code: V10
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
8V
VCEO
collector-emitter voltage
open base
5V
IC
DC collector current
6.5
mA
Ptot
total power dissipation
up to Ts = 165 °C;
note 1
32
mW
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
fT
transition frequency
IC = 1 mA; VCE = 1 V;
Tamb =25 °C; f = 500 MHz
3.5
5
GHz
GUM
maximum unilateral power
gain
IC = 0.5 mA; VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
15
dB
F
noise gure
Γ = Γ
opt;IC = 0.5 mA; VCE = 1 V;
Tamb =25 °C; f = 1 GHz
1.8
dB
Γ = Γopt;IC = 1 mA; VCE = 1 V;
Tamb =25 °C; f = 1 GHz
2
dB
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