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參數(shù)資料
| 型號： | 934005650112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOT-115D, 9 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 50K |
| 代理商： | 934005650112 |
2001 Oct 10
5
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF246B
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
VGS = 10 V; ID = 1.5 A.
handbook, halfpage
0
40
80
160
0.8
0.6
0.2
0
0.4
MGR741
120
Tj (°C)
RDSon
(
)
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
VGS = 0; f = 1 MHz.
handbook, halfpage
010
20
40
240
0
MGR742
30
180
120
60
VDS (V)
C
(pF)
Cis
Cos
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
VGS = 0; f = 1 MHz.
handbook, halfpage
010
20
40
24
0
MGR743
30
18
12
6
VDS (V)
Crs
(pF)
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