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參數(shù)資料
| 型號： | 934005650112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOT-115D, 9 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934005650112 |
2001 Oct 31
2
Philips Semiconductors
Product specication
860 MHz, 17 dB gain push-pull amplier
BGE885
FEATURES
Excellent linearity
Extremely low noise
Rugged construction
TiPtAu metallized crystals ensure
optimal reliability.
DESCRIPTION
Hybrid amplifier module for use in
CATV systems operating over a
frequency range of 40 to 860 MHz
with a voltage supply of 24 V (DC).
PINNING - SOT115D
Note
1. Pins 1 and 9 carry DC voltages.
PIN
DESCRIPTION
1
input; note 1
2
common
3
common
4
12 V, 60 mA supply terminal
5
common
6
common
7
common
8+VB
9
output; note 1
Fig.1 Simplified outline.
fpage
7
8
9
24
6
35
1
Side view
MBK049
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
16.5
17.5
dB
Itot
total current consumption (DC)
VB =24V
240
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
DC supply voltage
28
V
Vi
RF input voltage
65
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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