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參數(shù)資料
| 型號(hào)： | 934005650112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOT-115D, 9 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | 934005650112 |
2001 Oct 10
4
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF246B
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID =10mA
65
V
IDSS
drain-source leakage current
VGS = 0; VDS =28V
2mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
1
A
VGSth
gate-source threshold voltage
ID = 10 mA; VDS =10V
2
4.5
V
gfs
forward transconductance
ID = 1.5 A; VDS = 10 V
1.2
1.8
S
RDSon
drain-source on-state resistance
ID = 1.5 A; VGS =10V
0.4
0.75
IDSX
on-state drain current
VGS = 10 V; VDS =10V
10
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
125
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
75
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
11
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
VDS =10V.
handbook, halfpage
6
4
0
2
MGR739
10
102
103
104
T.C.
(mV/K)
ID (mA)
4
2
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
VDS =10V.
handbook, halfpage
020
12
0
4
8
MGR740
10
VGS (V)
ID
(A)
Tj = 25 °C
125
°C
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