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參數(shù)資料
| 型號(hào)： | 934004160115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | 934004160115 |
1996 May 09
5
Philips Semiconductors
Product specication
UHF power transistor
BLT80
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7).
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT80 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 9 V; PL = 0.8 W; Ts ≤ 60 °C.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
CW, class-B narrow band
900
7.5
0.8
≥6
≥60
typ. 8
typ. 67
Fig.5
Power gain and collector efciency as
functions of load power; typical values.
Class-B; f = 900 MHz; VCE = 7.5 V; Ts ≤ 60 °C.
handbook, halfpage
0
2
4
6
8
10
0
20
40
60
80
100
0
0.3
0.6
0.9
1.2
1.5
MRA774
Gp
ηC
(%)
Gp
(dB)
PL (W)
Fig.6
Load power as a function of drive
power; typical values.
Class-B; f = 900 MHz; VCE = 7.5 V; Ts ≤ 60 °C.
handbook, halfpage
0
0.3
0.6
0.9
1.2
1.5
0
200
400
600
MRA779
PL
(W)
PD (mW)
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