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參數(shù)資料
| 型號(hào)： | 934004160115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | 934004160115 |
1996 May 09
3
Philips Semiconductors
Product specication
UHF power transistor
BLT80
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
2. Transistor mounted on a printed-circuit board measuring 40
× 40 × 1 mm, collector pad 35 × 17 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
10
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
250
mA
IC(AV)
average collector current
250
mA
ICM
peak collector current
f
> 1 MHz
750
mA
Ptot
total power dissipation
Ts = 131 °C; note 1
2W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
175
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
Ptot =2W; Ts = 131 °C; note 1
22
K/W
Rth j-a
thermal resistance from junction to ambient
Ptot =2W; Tamb =25 °C; note 2
85
K/W
Fig.2 DC SOAR.
Ts = 131 °C.
handbook, halfpage
102
101
1
110
102
MRA780 - 1
IC
(A)
VCE (V)
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