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參數(shù)資料
| 型號： | 934004160115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 102K |
| 代理商： | 934004160115 |
1996 May 09
4
Philips Semiconductors
Product specication
UHF power transistor
BLT80
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. Measured under pulsed conditions: tp ≤ 200 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 2.5 mA
20
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC =5mA
10
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.5 mA
3
V
ICES
collector leakage current
VCE = 10 V; VBE =0
0.1
mA
hFE
DC current gain
VCE =5V; IC = 150 mA; note 1;
see Fig.3
25
Cc
collector capacitance
VCB = 7.5 V; IE =ie = 0; f = 1 MHz;
see Fig.4
3.5
pF
Cre
feedback capacitance
VCE = 7.5 V; IC = 0; f = 1 MHz
2.5
pF
Fig.3
DC current gain as a function of collector
current; typical values.
VCE = 7.5 V; tp ≤ 200 s; δ≤ 0.02; Tj =25 °C.
handbook, halfpage
0
20
40
60
80
100
0
200
400
600
800
MRA776
hFE
IC (mA)
Fig.4
Collector capacitance as a function of
collector-base voltage; typical values.
IE =ie = 0; f = 1 MHz; Tj =25 °C.
handbook, halfpage
0
1
2
3
4
5
0
4
8
12
16
20
MRA773
Cc
(pF)
VCB (V)
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