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參數(shù)資料
| 型號： | 934003520112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 934003520112 |
2000 Oct 17
6
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF245B
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th =25 °C; Rth mb-h = 0.3 K/W; unless otherwise specied.
RF performance in a push-pull, common source, class-B test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
η
D
(%)
CW, class-B
175
28
2
× 25
30
> 14
typ. 18
> 55
typ. 65
Ruggedness in class-B operation
The BLF245B is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases, under
the following conditions:
VDS = 28 V, f = 175 MHz at rated output power.
Fig.9
Power gain and efficiency as functions of
output power; typical values.
Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA;
ZL = 8.8 + j12.7 ; f = 175 MHz.
handbook, halfpage
010
20
40
20
0
10
15
5
80
0
40
60
20
30
MGP185
Gp
(dB)
Gp
PL (W)
ηD
Fig.10 Load power as a function of input power;
typical values.
Class-B operation; VDS = 28 V; IDQ =2 × 25 mA;
ZL = 8.8 + j12.7 ; f = 175 MHz.
handbook, halfpage
0
0.5
1.0
2.0
40
0
20
30
10
1.5
MGP186
PL
(W)
PIN (W)
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