參數(shù)資料
型號: 934003520112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 11/16頁
文件大小: 90K
代理商: 934003520112
2000 Oct 17
4
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF245B
CHARACTERISTICS (per section)
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 5 mA; VGS =0
65
V
IDSS
drain-source leakage current
VGS = 0; VDS =28V
1mA
IGSS
gate-source leakage current
±V
GS = 20 V; VDS =0
1
A
VGS(th)
gate-source threshold voltage
ID = 5 mA; VDS =10V
2
4.5
V
gfs
forward transconductance
ID = 0.75 A; VDS = 10 V
600
850
mS
RDS(on)
drain-source on-state resistance
ID = 0.75 A; VGS =10V
0.8
1.5
IDSX
on-state drain current
VGS = 10 V; VDS =10V
5
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
60
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
40
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
4.5
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
VDS =10V.
handbook, halfpage
2
8
MGP180
10
102
103
1
6
4
2
0
T.C.
(mV/K)
ID (mA)
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
VDS =10V.
handbook, halfpage
048
16
6
0
2
4
12
MGP181
ID
(A)
VGS (V)
Tj = 25 °C
125
°C
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