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參數(shù)資料
| 型號(hào)： | 934003520112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 934003520112 |
2000 Oct 17
3
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF245B
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Per transistor section unless otherwise specied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
±V
GS
gate-source voltage
20
V
ID
DC drain current
4.5
A
Ptot
total power dissipation
up to Tmb =25 °C; total device;
both sections equally loaded
75
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from
junction to mounting base
total device; both sections equally loaded
2.3
K/W
Rth mb-h
thermal resistance from
mounting base to heatsink
total device; both sections equally loaded
0.3
K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDS(on).
(2) Tmb =25 °C.
Total device; both sections equally loaded.
handbook, halfpage
MRA922
101
1
102
1
10
ID
(A)
VDS (V)
102
(1)
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
40
80
120
040
80
Ptot
(W)
120
Th (
oC)
160
(2)
(1)
MRA929
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