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參數(shù)資料
| 型號(hào)： | 933817070112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6 A, 65 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | 933817070112 |
September 1992
6
Philips Semiconductors
Product specication
HF power MOS transistor
BLF145
APPLICATION INFORMATION FOR CLASS-A OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 26 ; unless otherwise specied.
RF performance in SSB operation in a common source class-A circuit.
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
MODE OF
OPERATION
f
(MHz)
VDS
(V)
ID
(A)
PL
(W)
GP
(dB)
d3
(dB)
(note 1)
d5
(dB)
(note 1)
ZL
(
)
SSB, class-A
28
1.3
8 (PEP)
> 24
typ. 27
>40
typ.
43
<40
typ.
70
18.4
+ j5.2
Fig.9
Power gain as a function of load power,
typical values.
Class-A operation; VDS = 28 V; ID = 1.3 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th =25 °C.
dotted line: Th =70 °C.
handbook, halfpage
0
30
28
26
24
10
20
30
MGP040
Gp
(dB)
PL (W) PEP
Fig.10 Third order intermodulation distortion as a
function of load power, typical values.
Class-A operation; VDS = 28 V; ID = 1.3 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th =25 °C.
dotted line: Th =70 °C.
handbook, halfpage
010
20
30
20
30
50
60
40
MGP041
d3
(dB)
PL (W) PEP
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