參數(shù)資料
型號: 933817070112
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 6 A, 65 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 7/12頁
文件大小: 88K
代理商: 933817070112
September 1992
4
Philips Semiconductors
Product specication
HF power MOS transistor
BLF145
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 10 mA; VGS = 0
65
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
2mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
1
A
VGS(th)
gate-source threshold voltage
ID = 10 mA; VDS = 10 V
2
4.5
V
GS
gate-source voltage difference of
matched devices
ID = 10 mA; VDS = 10 V
100
mV
gfs
forward transconductance
ID = 1.5 A; VDS = 10 V
1.2
S
RDS(on)
drain-source on-state resistance
ID = 1.5 A; VGS = 10 V
0.4
0.75
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
10
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
125
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
75
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
7
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
VDS =10V.
handbook, halfpage
4
6
MGP036
102
103
104
10
4
2
0
2
T.C.
(mV/K)
ID (mA)
Fig.5
Drain current as a function of gate-source
voltage, typical values.
VDS =10V.
handbook, halfpage
05
ID
(A)
10
20
12
0
4
8
15
VGS (V)
MGP037
125
°C
Tj = 25 °C
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