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參數(shù)資料
| 型號： | 933817070112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 65 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 933817070112 |
September 1992
10
Philips Semiconductors
Product specication
HF power MOS transistor
BLF145
Fig.15 Third order intermodulation distortion as a
function of load power, typical values.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th =25 °C.
dotted line: Th =70 °C.
handbook, halfpage
0
20
30
40
50
20
40
60
MGP046
d3
(dB)
PL (W)
Fig.16 Fifth order intermodulation distortion as a
function of load power, typical values.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th =25 °C.
dotted line: Th =70 °C.
handbook, halfpage
0
20
30
40
50
20
40
60
MGP047
d5
(dB)
PL (W)
Fig.17 Power gain as a function of frequency,
typical values.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
PL = 30 W; Th =25 °C; Rth mb-h = 0.3 K/W;
R1 =34 ;ZL = 8.9 + j1 .
handbook, halfpage
030
21
19
20
MGP048
6
121824
Gp
(dB)
f (MHz)
Table 1
Input impedance as a function of frequency
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
PL = 30 W; Th = 25 °C;
Rth mb-h = 0.3 K/W; R1 = 34 ;ZL = 8.9 + j1 .
f
(MHz)
Zi
(
)
1.5
32.9
j2.2
3.0
32.4
j4.3
6.0
30.7
j8.1
10
27.4
j11.9
15
32.9
j14.6
20
18.5
j15.4
25
15.1
j15.3
30
12.5
j14.6
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