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參數(shù)資料
| 型號： | 933817060112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 933817060112 |
September 1992
6
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF245
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 1 k.
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
Zi
(
)
(note 1)
ZL
(
)
CW, class-B
175
28
50
30
> 13
typ. 15.5
< 50
typ. 67
2.0
j2.7
3.9
+ j4.4
175
12.5
50
12
typ. 12
typ. 66
2.4
j2.5
3.8
+ j1.3
Note
1. R1 included.
Ruggedness in class-B operation
The BLF245 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
Th =25 °C; Rth mb-h = 0.3 K/W; at rated load power.
Fig.9
Power gain and efficiency as functions of
load power, typical values.
Class-B operation; VDS = 28 V; IDQ =50mA;
f = 175 MHz; Th =25 °C; Rth mb-h = 0.3 K/W.
handbook, halfpage
10
20
30
50
20
0
10
100
0
50
40
MGP172
Gp
(dB)
PL (W)
ηD
(%)
Gp
ηD
Fig.10 Load power as a function of input power,
typical values.
Class-B operation; VDS = 28 V; IDQ =50mA;
f = 175 MHz; Th =25 °C; Rth mb-h = 0.3 K/W.
handbook, halfpage
60
0
0.6
2.4
10
MEA736
1.2
PL
(W)
PIN (W)
20
30
40
50
1.8
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