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參數(shù)資料
| 型號： | 933817060112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 933817060112 |
September 1992
3
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF245
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
VGS =0
65
V
±VGS
gate-source voltage
VDS =0
20
V
ID
DC drain current
6A
Ptot
total power dissipation
up to Tmb = 25 °C
68
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-mb
thermal resistance from
junction to mounting base
Tmb =25 °C; Ptot = 68 W
2.6 K/W
Rth mb-h
thermal resistance from
mounting base to heatsink
Tmb =25 °C; Ptot = 68 W
0.3 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDS(on).
(2) Tmb =25 °C.
handbook, halfpage
101
102
1
10
110
ID
(A)
VDS (V)
(1)
MRA921
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
40
80
160
100
80
40
20
0
60
120
MGP167
Ptot
(W)
Th (°C)
(1)
(2)
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