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參數(shù)資料
| 型號(hào)： | 933817060112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | 933817060112 |
September 1992
4
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF245
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID =10mA
65
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
2mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
1
A
VGS(th)
gate-source threshold voltage
ID = 10 mA; VDS = 10 V
2
4.5
V
GS
gate-source voltage difference of
matched devices
ID = 10 mA; VDS = 10 V
100
mV
gfs
forward transconductance
ID = 1.5 A; VDS = 10 V
1.2
1.9
S
RDS(on)
drain-source on-state resistance
ID = 1.5 A; VGS = 10 V
0.4
0.75
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
10
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
125
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
75
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
7
pF
F
noise gure (see Fig.14)
input and output power matched for:
ID = 1 A; VDS =28V; PL =30W;
R1 = 1 k
; Th =25 °C; f = 175 MHz
2
dB
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
VDS = 10 V; valid for Tj = 25 to 125 °C.
handbook, halfpage
6
2
T.C.
(mV/K)
ID (mA)
2
4
0
4
MGP168
10
102
103
104
Fig.5
Drain current as a function of gate-source
voltage, typical values.
VDS =10V.
handbook, halfpage
020
12
0
4
8
10
MGP169
ID
(A)
VGS (V)
Tj = 25 °C
125
°C
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