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參數(shù)資料
| 型號(hào)： | 933817030112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | 933817030112 |
September 1992
6
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF242
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specied.
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
RGS
(
)
CW, class-B
175
28
10
5
> 13
typ. 16
> 50
typ. 60
47
Ruggedness in class-B operation
The BLF242 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
VDS = 28 V; f =175 MHz at rated output power.
Noise gure (see Fig.11)
VDS = 28 V; ID = 0.2 A; f = 175 MHz;
RGS =47 ; Th =25 °C. Input and
output power matched for PL =5W;
F = typ. 5.5 dB.
Fig.9
Power gain and efficiency as functions of
load power, typical values.
Class-B operation; VDS = 28 V; IDQ =10mA;
RGS =47 ; f = 175 MHz.
handbook, halfpage
05
10
20
0
10
100
0
50
MGP143
ηd
(%)
Gp
PL (W)
Gp
(dB)
Fig.10 Load power as a function of input power,
typical values.
Class-B operation; VDS = 28 V; IDQ =10mA;
RGS =47 ; f = 175 MHz.
handbook, halfpage
0
0.5
1
10
0
5
MGP144
PL
(W)
PIN (W)
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