參數(shù)資料
型號(hào): 933817030112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 5/11頁
文件大?。?/td> 81K
代理商: 933817030112
September 1992
3
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF242
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
±VGS
gate-source voltage
20
V
ID
DC drain current
1A
Ptot
total power dissipation
up to Tmb = 25 °C
16
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-mb
thermal resistance from
junction to mounting base
Tmb =25 °C; Ptot = 16 W
11 K/W
Rth mb-h
thermal resistance from
mounting base to heatsink
Tmb =25 °C; Ptot = 16 W
0.3 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDS(on).
(2) Tmb =25 °C.
handbook, halfpage
MRA918
102
101
10
1
10
ID
(A)
VDS (V)
102
(1)
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
50
100
150
20
10
0
MPG141
(2)
(1)
Ptot
(W)
Th (°C)
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