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參數(shù)資料
| 型號： | 933817030112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 933817030112 |
September 1992
5
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF242
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values.
ID = 0.3 A; VGS =10V.
handbook, halfpage
0
6
4
2
0
50
100
150
MBB778
Tj (
oC)
RDS (on)
(
)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
30
20
10
0
10
20
30
MBB776
VDS (V)
C
(pF)
Cis
Cos
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
6
4
2
0
10
20
30
MBB775
VDS (V)
Crs
(pF)
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