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參數(shù)資料
| 型號： | 933783040114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 103K |
| 代理商： | 933783040114 |
1997 Feb 18
4
Philips Semiconductors
Product specication
NPN microwave power transistor
RZ1214B35Y
THERMAL CHARACTERISTICS
Tj =75 °C unless otherwise specied
Notes
1. See
“Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
The transistors are 100% tested under the following conditions
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
5
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink
note 1
0.2
K/W
Zth j-h
thermal resistance from junction to heatsink
tp = 100 s; δ =10%;
notes 1 and 2
1
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 20 mA; IE =0
65
V
V(BR)CES
collector-emitter breakdown voltage
IC = 20 mA; RBE =0
60
V
V(BR)EBO
emitter-base breakdown voltage
IC = 0; IE =3mA
3
V
ICBO
collector cut-off current
VCB =50V; IE =0
2mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC =0
0.2
mA
MODE OF
OPERATION
CONDITIONS
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
η
C
(%)
Zi; ZL
(
)
Class-C
tp = 150 s; δ = 5%
1.2 to 1,4
50
typ.40; >35
typ.7.8; >7
typ.35; >35
see Fig 4
tp = 300 s; δ = 10% 1.2 to 1,4
50
typ.40;
typ.7
typ.35
see Fig 4
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