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參數(shù)資料
| 型號： | 933783040114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 933783040114 |
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RZ1214B35Y
Information as of 2000-08-28
RZ1214B35Y; NPN microwave power transistor
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the
flange.
l
Interdigitated structure provides high emitter efficiency
l
Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
l
Gold metallization realizes very stable characteristics and excellent lifetime
l
Multicell geometry gives good balance of dissipated power and low thermal resistance
l
Internal input matching ensures good stability and allows an easier design of wideband circuits.
Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band.
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Description
Features
Applications
Datasheet
Type nr.
Title
Publication
release date
Datasheet status
Page
count
File
size
(kB)
Datasheet
RZ1214B35Y NPN microwave power transistor
18-Feb-97
Product
Specification
8
69
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