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參數(shù)資料
| 型號： | 933783040114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 933783040114 |
1997 Feb 18
3
Philips Semiconductors
Product specication
NPN microwave power transistor
RZ1214B35Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
65
V
VCEO
collector-emitter voltage
open base
15
V
VCES
collector-emitter voltage
RBE =0
60
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
tp ≤ 150 s; δ≤ 5%≤
3A
Ptot
total power dissipation
Tmb ≤ 75 °C;
tp ≤ 150 s; δ≤ 5%
125
W
Tstg
storage temperature
65
+200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
at 0.2 mm from the case;
t
≤ 10 s
235
°C
Fig.2
Power derating curve.
tp = 150 s; δ= 5%.
handbook, halfpage
0
50
100
200
150
50
0
100
150
MGD974
Ptot
(W)
Tmb (°C)
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