參數(shù)資料
型號(hào)： 933779670215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-4
文件頁(yè)數(shù)： 9/16頁(yè)
文件大小： 133K
代理商： 933779670215
1998 Oct 02
2
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
MARKING
TYPE NUMBER
CODE
BFG67 (Fig.1)
V3
BFG67/X (Fig.1)
V12
BFG67/XR (Fig.2)
V26
PINNING
PIN
DESCRIPTION
BFG67
BFG67/X
BFG67/XR
1
collector
2
base
emitter
3
emitter
base
4
emitter
Fig.1
Simplified outline
SOT143B.
handbook, 2 columns
Top view
MSB014
12
3
4
Fig.2
Simplified outline
SOT143R.
handbook, 2 columns
Top view
MSB035
1
2
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
10
V
IC
collector current (DC)
50
mA
Ptot
total power dissipation
Ts ≤ 65 °C
300
mW
Cre
feedback capacitance
IC =ic = 0; VCB = 8 V; f = 1 MHz
0.5
pF
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 500 MHz
8
GHz
GUM
maximum unilateral power
gain
IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
17
dB
F
noise gure
Γ
s = Γopt; IC = 5 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
1.3
dB
Γs = Γopt; IC = 5 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz
2.2
dB
相關(guān)PDF資料
PDF描述
0590080000 27 A, MODULAR TERMINAL BLOCK, 2 ROWS, 1 DECK
934008060114 L BAND, Si, NPN, RF POWER TRANSISTOR
934008580215 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
934008950115 8 ohm, Si, POWER, FET
934008990215 VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
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