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參數(shù)資料
| 型號(hào)： | 933779670215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 133K |
| 代理商： | 933779670215 |
1998 Oct 02
5
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Fig.4
DC current gain as a function of collector
current.
VCE =5V.
handbook, halfpage
0
120
80
40
0
20
40
MBB301
60
I
(mA)
C
FE
h
Fig.5
Feedback capacitance as a function of
collector-base voltage.
IC =ic = 0; f = 1 MHz.
handbook, halfpage
0
0.8
0.6
0.4
0.2
4
MBB302
812
16
Cre
(pF)
VCB (V)
0
Fig.6
Transition frequency as a function of
collector current.
VCE = 8 V; Tamb =25 °; f = 2 GHz.
handbook, halfpage
010
20
40
8
6
2
0
4
MBB303
30
I
(mA)
C
(GHz)
T
f
10
Fig.7 Gain as a function of collector current.
VCE = 8 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
handbook, halfpage
gain
(dB)
IC (mA)
0
20
15
10
0
10
20
40
MBB304
30
25
5
MSG
G UM
max
G
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