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參數(shù)資料
| 型號： | 933779670215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 133K |
| 代理商： | 933779670215 |
1998 Oct 02
4
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
VCB =5V; IE =0
50
nA
hFE
DC current gain
IC = 15 mA; VCE = 5 V
60
100
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 500 MHz
8
GHz
Cc
collector capacitance
IE =ie = 0; VCB = 8 V; f = 1 MHz
0.7
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
1.3
pF
Cre
feedback capacitance
IC =ic = 0; VCB = 8 V; f = 1 MHz
0.5
pF
GUM
maximum unilateral power
gain; note 1
IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
17
dB
IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz
10
dB
F
noise gure
Γs = Γopt; IC = 5 mA; VCE =8V
Tamb =25 °C; f = 1 GHz
1.3
dB
Γ
s = Γopt; IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
1.7
dB
IC = 5 mA; VCE =8V;
Tamb = 25 °C; f = 2 GHz; ZS =60
2.5
dB
IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz; ZS =60
3
dB
G
UM
10
S
21
2
1S
11
2
–
() 1S
22
2
–
()
-------------------------------------------------------------- dB.
log
=
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