參數(shù)資料
型號(hào)： 933715830114
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： METAL CERAMIC PACKAGE-2
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 78K
代理商： 933715830114
1997 Feb 18
4
Philips Semiconductors
Product specication
NPN microwave power transistor
LZ1418E100R
THERMAL CHARACTERISTICS
Note
1. See
“Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
Tmb =25 °C unless otherwise specied.
APPLICATION INFORMATION
Microwave performance up to Tmb =25 °C in a common emitter class-A wideband amplier; note 1.
Note
1. Amplifier consists of test circuit board without any additional tuning.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
Tj =75 °C
2.2
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink
Tj =75 °C; note 1
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
VCB = 20 V; IE =0
2mA
VCB = 40 V; IE =0
20
mA
ICER
collector cut-off current
VCE = 30 V; RBE = 220
20
mA
ICEO
collector cut-off current
VCE = 20 V; IB =0
20
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC =0
200
A
hFE
DC current gain
VCE =3V; IC =2A
15
100
MODE OF OPERATION
f
(GHz)
VCE
(V)
IC
(A)
PL1
(W)
Gpo
(dB)
Zi; ZL
(
)
Class-A (CW)
1.4 to 1.8
16
2
≥9
typ. 10
≥10
typ. 11
see Fig 7
相關(guān)PDF資料
PDF描述
0559-6204-08 U Interface Xfmr
933722350235 Si, PNP, RF SMALL SIGNAL TRANSISTOR
933722350215 Si, PNP, RF SMALL SIGNAL TRANSISTOR
933723920602 F/FAST SERIES, QUAD 2-INPUT NAND GATE, PDIP14
933777990602 F/FAST SERIES, QUAD 2-INPUT NAND GATE, PDSO14
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