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參數(shù)資料
| 型號： | 933715830114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 78K |
| 代理商： | 933715830114 |
1997 Feb 18
2
Philips Semiconductors
Product specication
NPN microwave power transistor
LZ1418E100R
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistor provides excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Internal input and output prematching ensures good
stability and allows an easier design of wideband
circuits.
APPLICATIONS
Common emitter class A amplifiers in CW conditions for
military and professional applications between
1.4 to 1.8 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the emitter
connected to the flange.
PINNING - SOT443A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to ange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
QUICK REFERENCE DATA
Microwave performance up to Tmb =25 °C in a common emitter class A wideband amplier.
MODE OF OPERATION
f
(GHz)
VCE
(V)
IC
(A)
PL1
(W)
Gpo
(dB)
Zi; ZL
(
)
Class-A (CW)
1.4 to 1.8
16
2
≥9
≥10
see Fig 7
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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