參數(shù)資料
型號(hào)： 933715830114
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： METAL CERAMIC PACKAGE-2
文件頁數(shù)： 6/12頁
文件大小： 78K
代理商： 933715830114
1997 Feb 18
3
Philips Semiconductors
Product specication
NPN microwave power transistor
LZ1418E100R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
45
V
VCER
collector-emitter voltage
RBE = 220
30
V
VCEO
collector-emitter voltage
open base
20
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
4A
Ptot
total power dissipation
Tmb ≥ 75 °C
45
W
Tstg
storage temperature
65
+200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
at 0.2 mm from ange;
t
≤ 10 s
235
°C
Tmb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 220 .
Fig.2 DC SOAR.
handbook, halfpage
MGL003
110
VCE (V)
IC
(A)
102
10
1
101
102
(1)
(2)
Fig.3
Power derating curve.
handbook,
0
50
100
200
50
0
40
150
30
20
10
MGD970
Ptot
(W)
Tmb (°C)
相關(guān)PDF資料
PDF描述
0559-6204-08 U Interface Xfmr
933722350235 Si, PNP, RF SMALL SIGNAL TRANSISTOR
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