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參數(shù)資料
| 型號(hào)： | 7MBR50SD120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | 50 A, 1600 V, SCR |
| 封裝： | MODULE-38 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 427K |
| 代理商： | 7MBR50SD120 |
IGBT Module
7MBR50SD120
0
20
406080
50
100
500
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 24
, Tj= 25°C
S
w
it
chi
n
g
ti
m
e
:
to
n,
tr
,to
ff
,
tf
[
n
s
e
c
]
Collector current : Ic [ A ]
0
2040
6080
50
100
500
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 24
, Tj= 125°C
Collector current : Ic [ A ]
S
w
it
chi
n
g
ti
m
e
:
to
n,
tr
,to
ff
,
tf
[
n
s
e
c
]
10
50
100
500
50
100
500
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 25°C
Gate resistance : Rg [
]
S
w
it
chi
ng
ti
m
e
:
to
n,
tr
,to
ff
,
tf
[
n
s
e
c
]
0
2040
6080
100
0
2
4
6
8
10
12
14
Err(25°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
Eoff(125°C)
Eon(125°C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=24
S
w
it
chi
ng
l
o
s
:
E
o
n,
E
o
ff
,E
rr
[
m
J
/pul
se
]
Collector current : Ic [ A ]
10
50
100
500
0
10
20
30
40
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C
S
w
it
chi
ng
l
o
s
:
E
o
n,
E
o
ff
,E
rr
[
m
J
/pul
se
]
Gate resistance : Rg [
]
Eon
Err
Eoff
0
200
400
600
800
1000
1200
1400
0
100
200
300
400
500
600
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=24
, Tj<=125°C
Collector - Emitter voltage : VCE [ V ]
Co
lle
c
to
rcu
rr
en
t
:Ic
[
A
]
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