參數(shù)資料
型號: 7MBR50SD120
廠商: FUJI ELECTRIC CO LTD
元件分類: 晶閘管
英文描述: 50 A, 1600 V, SCR
封裝: MODULE-38
文件頁數(shù): 2/7頁
文件大?。?/td> 427K
代理商: 7MBR50SD120
IGBT Module
7MBR50SD120
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Characteristics
Unit
Min.
Typ.
Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
Thermistor
Converter
Thyristor
Brake
Inverter
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, Ic=50A
chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=50A
VGE=±15V
RG=24
IF=50A
chip
terminal
IF=50A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=25A, VGE=15V chip
terminal
VCC=600V
IC=25A
VGE=±15V
RG=51
VR=1200V
VDM=1600V
VRM=1600V
VD=6V, IT=1A
ITM=50A
chip
terminal
IF=50A
chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
250
200
8.5
2.7
1.2
0.6
1.0
0.3
3.3
350
250
200
2.7
1.2
0.6
1.0
0.3
250
1.0
100
2.5
1.15
1.5
250
6000
5.5
7.2
A
nA
V
pF
s
V
ns
A
nA
V
s
A
mA
V
A
K
Item
Symbol
Condition
Characteristics
Unit
Min.
Typ.
Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
0.35
0.75
0.69
0.56
°C/W
0.50
0.05
Thermal resistance ( 1 device )
Rth(j-c)
Contact thermal resistance
*
Rth(c-f)
Thermal resistance Characteristics
* This is the value which is defined mounting on the additional cooling fin with thermal compound
2.1
2.3
0.35
0.25
0.45
0.08
2.3
2.5
2.1
2.25
0.35
0.25
0.45
0.08
1.0
1.1
1.2
5000
465
495
520
3305
3375
3450
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