參數(shù)資料
型號: 74F8963
廠商: NXP Semiconductors N.V.
英文描述: 9-Bit latched bidirectional Futurebus transceivers open-collector
中文描述: 9位鎖存雙向Futurebus收發(fā)器集電極開路
文件頁數(shù): 7/10頁
文件大小: 97K
代理商: 74F8963
Philips Semiconductors FAST Products
Product specification
74F8962/8963
9-Bit latched bidirectional Futurebus transceivers
(open-collector)
March 11, 1993
7
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
PARAMETER
TEST
LIMITS
TYP
2
UNIT
CONDITIONS
1
MIN
MAX
I
OH
I
OFF
V
OH
High-level output current
B0 – B8
V
CC
= MAX, V
IL
= MAX, V
IH
= MIN, V
OH
= 2.1V
V
CC
= 0.0V, V
IL
= MAX, V
IH
= MIN, V
OH
= 2.1V
V
CC
= MAX, V
IL
= MAX, V
IH
= MIN, I
OH
= –3mA
V
CC
= MIN,
V
IL
= MAX
V
IH
= MIN
V
CC
= MIN, I
I
= I
IK
100
μ
A
μ
A
Power-off output current
B0 – B8
AO0 – AO8
4
AO0 – AO8
4
100
High-level output voltage
2.5
V
CC
0.50
V
I
OL
= 24mA
I
OL
= 100mA
I
OL
= 4mA
V
V
OL
Low-level output voltage
B0 – B8
0.75
1.0
1.10
V
0.40
V
V
IK
Input clamp voltage
-1.2
V
I
I
Input current at
maximum input voltage
OEAB, OEBA,
LEAB, LEBA,
AI0 – AI8
B0 – B8
OEAB, OEBA,
LEAB, LEBA,
AI0 – AI8
V
CC
= MAX, V
I
= 7.0V
100
μ
A
V
CC
= MAX, V
I
= 5.5V
1
mA
I
IH
High-level input current
V
CC
= MAX, V
I
= 2.7V
20
μ
A
B0 – B8
OEAB, OEBA,
LEAB, LEBA,
AI0 – AI8
V
CC
= MAX, V
I
= 2.1V
100
μ
A
I
IL
Low-level input current
V
CC
= MAX, V
I
= 0.5V
–100
μ
A
B0 – B8
V
CC
= MAX, V
I
= 0.3V
–100
μ
A
I
OZH
Off state output current,
high-level voltage applied
AO0 – AO8
V
CC
= MAX, V
O
= 2.7V
50
μ
A
I
OZL
Off state output current,
low-level voltage applied
V
CC
= MAX, V
I
= 0.5V
–50
μ
A
I
OS
Short circuit output
current
3
AO0 –
AO8
7’F8960
V
= MAX, Bn = 1.3V, OEBA = 0.8V,
OEAB
= 2.7V
-60
-150
mA
only
74F8963
V
CC
= MAX, Bn = 1.8V, OEBA = 0.8V,
OEAB
= 2.7V
I
CCH
I
CCL
I
CCZ
V
CC
= MAX
V
CC
= MAX, V
IL
= 0.5V
80
110
mA
I
CC
Supply current (total)
105
145
mA
80
110
mA
NOTES TO DC ELECTRICAL CHARACTERISTICS
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V
CC
= 5V, T
amb
= 25
°
C.
3. Not more than one output should be shorted at a time. For testing I
OS
, the use of high-speed test apparatus and/or sample-and-hold
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter tests, I
OS
tests should be performed last.
4. Due to test equipment limitations, actual test conditions are for V
IH
= 1.8V and V
IL
= 1.3V.
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