- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄158051 > 71V25761S183PF8 (INTEGRATED DEVICE TECHNOLOGY INC) 128K X 36 CACHE SRAM, 3.3 ns, PQFP100 PDF資料下載
參數(shù)資料
| 型號： | 71V25761S183PF8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 CACHE SRAM, 3.3 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 618K |
| 代理商： | 71V25761S183PF8 |
6.42
IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
11
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
1
0
1
Second Address
0
1
0
1
0
Third Address
1
0
1
0
1
Fourth Address(1)
111
00
1
0
5297 tbl 14
Linear Burst Sequence Table (LBO=VSS)
Synchronous Write Function Truth Table(1, 2)
Asynchronous Truth Table(1)
Interleaved Burst Sequence Table (LBO=VDD)
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2.
BW3 and BW4 are not applicable for the IDT71V2578.
3. Multiple bytes may be selected during the same cycle.
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Synchronous function pins must be biased appropriately to satisfy operation requirements.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
Operation
GW
BWE
BW1
BW2
BW3
BW4
Read
H
XXX
X
Read
H
L
HH
Write all Bytes
L
XXXX
X
Write all Bytes
H
LL
LLL
Write Byte 1(3)
HL
L
H
Write Byte 2(3)
HL
H
L
H
Write Byte 3(3)
HL
H
L
H
Write Byte 4(3)
HL
H
HHL
5297 tbl 12
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
1
0
1
Second Address
0
1
0
1
0
Third Address
1
0
1
0
1
Fourth Address(1)
11
000
11
0
5297 tbl 15
Operation(2)
OE
ZZ
I/O Status
Power
Read
L
Data Out
Active
Read
H
L
High-Z
Active
Write
X
L
High-Z – Data In
Active
Deselected
X
L
High-Z
Standby
Sleep Mode
X
H
High-Z
Sleep
5297 tbl 13
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 71V3557SA75BGI8 | 128K X 36 ZBT SRAM, 7.5 ns, PBGA119 |
| 71V3557SA85BG8 | 128K X 36 ZBT SRAM, 8.5 ns, PBGA119 |
| 71V67703S75BQ | 256K X 36 CACHE SRAM, 7.5 ns, PBGA165 |
| 72-30-33 | 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR |
| 72-40-43 | 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 71V25761S183PFG | 功能描述:靜態(tài)隨機(jī)存取存儲器 128Kx36 SYNC 3.3V PIPELINED BURST 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V25761S183PFG8 | 功能描述:靜態(tài)隨機(jī)存取存儲器 128Kx36 SYNC 3.3V PIPELINED BURST 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V25761S183PFGI | 功能描述:靜態(tài)隨機(jī)存取存儲器 128Kx36 SYNC 3.3V PIPELINED BURST 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V25761S183PFGI8 | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mb PB靜態(tài)隨機(jī)存取存儲器 128K x 36 w/2.5V I/O Pipeline RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V25761S200BG | 功能描述:靜態(tài)隨機(jī)存取存儲器 128Kx36 SYNC 3.3V PIPELINED BURST 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。